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c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2010 www. ruichips .com ru 6 0 2 00r n - channel advanced power mosfet mosfe t features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 6 0 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 230 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 9 0 0 a t c =25 c 230 i d continuous drain current t c =100 c 1 8 0 a t c =25 c 330 p d maximum power dissipation t c =100 c 167 w r q jc thermal resistance - junction to case 0. 45 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 1 4 0 0 m j ? 6 0 v/ 23 0a, r ds ( on ) = 2.5 m w (type ) v gs =10v i ds = 8 0 a ? ultra low on - resistance ? exceptional dv/dt capability ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operating temperature ? lead free and gre en available ? switching a pplication systems ? inverter systems absolute maximum ratings to - 220 to - 220f to - 263 to - 247 n - channel mosfe t
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 2 www. ruichips .com ru 60 2 00r electrical characteristics ( t a =25 c unless otherwise noted) ru 60 2 00r symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 6 0 v v ds = 6 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 100 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 8 0 a 2 . 5 3.5 m w notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. limited by t jmax , i as = 8 0 a, v dd = 48v, r g = 47 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, d uty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 8 0 a, v gs =0v 1. 2 v t rr reverse recovery time 89 ns q rr reverse recovery charge i sd = 8 0 a, dl sd /dt=100a/ m s 175 nc dynamic cha racteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 1 w c iss input capacitance 65 00 c oss output capacitance 940 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 650 pf t d ( on ) turn - on delay time 29 t r turn - on rise time 38 t d ( off ) turn - off delay time 80 t f turn - off fall time v dd = 30 v, r l = 30 w , i ds = 80 a, v gen = 10v, r g = 8 w 125 ns gate charge characteristics q g total gate charge 158 208 q gs gate - source charge 35 q gd ga te - drain charge v ds = 48 v, v gs = 10v, i ds = 8 0 a 52 nc
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 3 www. ruichips .com ru 60 2 00r typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec )
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 4 www. ruichips .com ru 60 2 00r typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 5 www. ruichips .com ru 60 2 00r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 6 www. ruichips .com ru 60 2 00r avalanche test circuit and waveforms switching time test circuit and waveforms
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 7 www. ruichips .com ru 60 2 00r ordering and marking information ru 6 02 00 package (available) r : to - 220; s: to - 263 ; p: to - 220f ; q: to - 247 operating temperature range c : - 55 to 175 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 8 www. ruichips .com ru 60 2 00r package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm in ch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0 .362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 9 www. ruichips .com ru 60 2 00r to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 10 www. ruichips .com ru 60 2 00r to - 220f - 3l all dimensions refer to jedec standard do not include mold flash o r protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max e 9.96 10.16 10.36 0.392 0. 400 0.408 ?p 3 - 3.450 - - 0.136 - a 4.50 4.70 4.90 0.177 0.185 0.193 1 5 7 9 5 7 9 a 1 2.34 2.54 2.74 0.092 0.100 0.108 2 - 45 - - 45 - a2 0.95 1.05 1.15 0.037 0.041 0.045 dep 0.05 0.10 0.15 0.002 0.004 0.006 a3 0.42 0.52 0.62 0.017 0.020 0.024 f1 1.90 2.00 2.10 0.075 0.079 0.083 a4 2.65 2.75 2.85 0.104 0.108 0 .112 f2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - f3 3.20 3.30 3.40 0.126 0.130 0.134 d 15.67 15.87 16.07 0.617 0.625 0.633 g 3.25 3.45 3.65 0.128 0.136 0.144 q 8.80 9.00 9.20 0.346 0.354 0.362 g1 5.90 6.00 6.10 0.232 0.236 0.240 h 1 6.48 6.68 6.88 0.255 0.263 0.271 g2 6.90 7.00 7.10 0.272 0.276 0.280 e 2.54bsc 0.1bsc b1 1.17 1.20 1.24 0.046 0.047 0.048 ?p - 3.183 - - 0.125 - b2 0.77 0.8 0.85 0.030 0.031 0.033 l 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 d1 8.99 9.19 9.39 0.354 0.362 0.370 e1 9.8 10.00 10.20 0.386 0.394 0.412 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 k1 0.75 0.8 0.85 0.030 0.031 0.033 ?p 2 1.15 1.20 1.25 0.045 0.047 0.049
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 11 www. ruichips .com ru 60 2 00r to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b 1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.0 00 0.012 e1 3.500 ref. 0.138 ref.
c opyrigh t ruichips semiconductor co . , ltd rev . a C nov ., 20 10 12 www. ruichips .com ru 60 2 00r customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com inves tor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact : legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 75 5 ) 8311 - 4278 e - mail: sales - sz@ruichips.com

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